Facoltà di Ingegneria - Guida degli insegnamenti (Syllabus)


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Dispositivi Elettronici
Electronic Devices
Mauro Ballicchia

Seat Ingegneria
A.A. 2016/2017
Credits 9
Hours 72
Period I
Language ENG


Learning outcomes
The course provides a thorough knowledge and understanding on the operating principles of the main solid-state devices in order to apply it to design of electronic circuits, deepening in particular some design techniques typical of CMOS radio-frequency integrated circuits. Starting from the basic principles of the semiconductor physics the course will introduce the equations of semiconductors both in equilibrium and out-of-equilibrium. This knowledge will be used to describe the operating principles of the main solid-state devices, in all the operating regions, and introduce the fundamental knowledge on sub-micrometer and nanometer technologies, the device scaling and its influence on the performance of the devices. The course provides also a knowledge and understanding of the high-frequency behavior and the noise models of the devices that will be applied by introducing the main design techniques of radio-frequency integrated circuits.
The course allows to apply the knowledge of the semiconductor theory to analyze and model the electrical behaviour of the main semiconductor devices until the nanometer scale. The skill to model the electrical behavior of the electronic devices is applied in the basic design techniques of radio-frequency integrated circuits, in order to provide the student the applying knowledge about design problems with conflicting constraints.
The course includes multidisciplinary contents, since, starting from the basic knowledge of classical and modern physics, introduces the semiconductor physics in order to analyze the behavior of semiconductor devices and extract both analytical and circuit model to be used in the design of electronic circuits. This aims to allow the students to develop transversal skills, in order to improve the ability of making judgements in the analysis of the emerging micro and nano-electronic technologies, that are continuously evolving, and contemporary makes the students able to work with expert of different disciplinary area. Moreover interdisciplinarity contributes also to improve learning skills, by harmonizing the contents in a unitary vision, and providing, at the same time, the basic elements for subsequent courses, that are more specialized and application oriented.

Recall of quantum mechanics. Kronig-Penney model. Effective mass of electrons and holes in semiconductors. Statistical mechanics, carrier concentration at thermal equilibrium, non-equilibrium phenomena in semiconductors: carrier transport and Generation-Recombination. Drift-Diffusion model. PN Junction and MOSFET: physical operation, DC and high-frequency device modelling. Noise sources. Noise in linear two-ports. MOSFET noise. Submicron and nanometer technologies: submicron effects in MOSFET and device scaling. Fundamentals of radio-frequency integrated circuit design: design of amplifiers by scattering parameters, design of Low-Noise Amplifiers (LNA). Varactors, voltage-controlled oscillators and mixers.

Development of the examination
The examination consists of an oral test, structured into three questions regarding the main topics covered by the course, that are: the physics of semiconductors, the physical operation and the models of semiconductor devices, the basic design techniques for radio-frequency integrated circuits in submicron CMOS technologies. If necessary, the questions whose answer requires the execution of short calculations, will be carried out in written form during the oral test.

The student, during the oral examination, must demonstrate, through the discussion of the questions posed by the teacher, to possess the knowledge and the analytical tools necessary to describe the physical operation of semiconductor devices, to be able to apply them to derive the device models in all the operating conditions and to analyze the scaling issues in modern submicrometer and nanometer technologies. The student must also demonstrate to know and be able to use device models and possess the methodological skills to design basic radio-frequency circuits. In order to pass the oral test with a positive evaluation, the student must demonstrate to have well understood the contents of the course, that must be presented in a sufficiently correct manner with the use of an adequate technical and scientific terminology. The highest mark is achieved by demonstrating an in-depth knowledge of the contents of the course, that must be presented with a complete mastery of the technical-scientific language.

For each question, posed during the oral test, it is assigned a mark between zero and thirty. The final mark, that is expressed in thirtieths, is the average of the marks obtained in the questions.

In order that the final outcome of the evaluation is positive, the student must achieve the pass mark, equal to eighteen points, in each of the questions, which corresponds to possess an overall knowledge of the contents of the course. The highest mark will be achieved by demonstrating an in-depth knowledge of the contents. The honours will be given to the students who, having achieved the highest mark, have demonstrated a complete mastery of the subject and a particular brilliance of exposition.

Recommended reading
S.M. Sze, K. K. Ng , ”Physics of Semiconductor Devices 3rd edition”, John Wiley and Sons, Inc. 2007. G. Ghione, ”Dispositivi per la Microelettronica”, McGraw-Hill R.S. Muller, T.I. Kamins, ”Device Electronics for Integrated Circuits”, John Wiley and Sons, Inc. 2003. T.H. Lee, ”The Design of CMOS Radio-Frequency Integrated Circuits”, Cambridge University Press, 2004. G.D. Vendelin, A.M. Pavio, U.L. Rhode, ”Microwave Circuit Design using Linear and Nonlinear Techniques”, John Wiley and Sons, Inc. 2005, 1990.

  • Ingegneria Elettronica (Corso di Laurea Magistrale (DM 270/04))

Università Politecnica delle Marche
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