Facoltà di Ingegneria - Guida degli insegnamenti (Syllabus)

Program


Search Search    Print Print

Dispositivi Elettronici
Electronic Devices
Mauro Ballicchia

Seat Ingegneria
A.A. 2015/2016
Credits 9
Hours 72
Period I
Language ENG

Prerequisites
None

Learning outcomes
Know and understand the main electronic devices . Know how to design basic circuits in Radio Frequency.

Program
Recall to quantum mechanics. Kronig-Penney model. Effective mass of electrons and holes in semiconductors. Statistical mechanics: carrier concentration at thermal equilibrium, carrier transport and Generation-Recombination phenomena. Drift-Diffusion model. PN Junction and MOSFET: physical operation, DC and high-frequency device modelling. Noise sources. Noise in linear two-ports. MOSFET noise. Submicron IC technologies: submicron effects in MOSFET and device scaling. Fundamentals of radio-frequency integrated circuit design: design of amplifiers by scattering parameters, design of Low-Noise Amplifiers (LNA). Varactors, voltage-controlled oscillators and mixers.

Development of the examination
LEARNING EVALUATION METHODS
The examination consists of an oral test, structured into three questions regarding the main topics covered by the course, that are: the physics of semiconductor devices, the device models and the basic design techniques for radio-frequency integrated circuits. If necessary, the questions whose answer requires the execution of short calculations, will be carried out in written form during the oral test.

LEARNING EVALUATION CRITERIA
The student, during the oral examination, must demonstrate, through the discussion of the questions posed by the teacher, to possess the knowledge and the analytical tools necessary to describe the physical operation of the semiconductor devices, and to know the models of the devices in all the operating conditions. The student must also demonstrate to know modern sub-micron technologies and possess the methodological skills to design basic radio-frequency circuits. In order to successfully pass the oral test, the student must demonstrate to have a good knowledge of the contents of course, that must be exposed in a sufficiently correct manner with the use of an adequate technical and scientific terminology. The highest mark is achieved by demonstrating an in-depth knowledge of the contents of the course, that must be exposed with a complete mastery of the technical-scientific language.

LEARNING MEASUREMENT CRITERIA
For each question, posed during the oral test, it is assigned a mark between zero and thirty. The final mark, that is expressed in thirtieths, is the average of the marks obtained in the questions.

FINAL MARK ALLOCATION CRITERIA
In order that the overall outcome of the evaluation is positive, the student must achieve the pass mark, equal to eighteen points, in each of the questions, which corresponds to possess a complete knowledge of the contents of the course. The highest mark will be achieved by demonstrating an in-depth knowledge of the contents. The honours will be given to the students who, having achieved the highest mark, have demonstrated a complete mastery of the subject and a particular brilliance of exposition.

Recommended reading
S.M. Sze, K. K. Ng , “Physics of Semiconductor Devices 3rd edition“, John Wiley and Sons, Inc. 2007. G. Ghione, “Dispositivi per la Microelettronica“, McGraw-Hill R.S. Muller, T.I. Kamins, “Device Electronics for Integrated Circuits“, John Wiley and Sons,

Courses
  • Ingegneria Elettronica (Corso di Laurea Magistrale (DM 270/04))




Università Politecnica delle Marche
P.zza Roma 22, 60121 Ancona
Tel (+39) 071.220.1, Fax (+39) 071.220.2324
P.I. 00382520427