Facoltà di Ingegneria - Guida degli insegnamenti (Syllabus)

Program


Search Search    Print Print

Micro e Nano Elettronica
Micro-Nano Electronics
Claudio Turchetti

Seat Ingegneria
A.A. 2016/2017
Credits 9
Hours 72
Period II
Language ENG

Prerequisites
Basic Electronics, Physics of Semiconductor

Learning outcomes
KNOWLEDGE AND UNDERSTANDING:
The course aims to provide the necessary knowledge for designing the CMOS integrated circuits. To this end the fundamental technological processes for the fabrication of Si devices, the current and high performance low frequency amplifier topologies, the main low frequency filtering techniques will be studied.
CAPACITY TO APPLY KNOWLEDGE AND UNDERSTANDING:
The course is intended to train the students so that they acquire the capability of applying the knowledge on electron devices to the design specifications, to the selection and sizing of circuits to obtain the desired performance, to the using of CAD software tools.
TRANSVERSAL SKILLS:
The course provides a multidisciplinary background on semiconductor physics, analog circuits, analog filtering techniques, which can be spent in the fields of biomedical engineering, telecommunications, automatic control and information technology in general.

Program
Elements of semiconductor physics for device electronics: fundamental equations, p-n junction, MOS transistor, drain current of the MOSFET and small signal model. Processes for the fabrication of Silicon devices: wafer production, Lithography, Etching, Diffusion, Ion implantation, Front-end, Back-end, CMOS technology. SPICE MOSFET model: second order effects. Design elements of elementary CMOS analog circuits: single stage amplifiers, differential amplifier, circuits for biasing, Operational amplifiers single-stage and two-stage. Design elemnts of analog filters. Switched-capacitor Filters: bilinear transformation, SC-filters low-Q and high-Q, CMOS switch, non-ideality of switch and Op-Amp.

Development of the examination
LEARNING EVALUATION METHODS
oral examination

LEARNING EVALUATION CRITERIA
To pass the exam the student will show to know all the metodologies and techniques for designing CMOS integrated analog circuits.

LEARNING MEASUREMENT CRITERIA
A score in the range 18-30 will be given as a final grade.

FINAL MARK ALLOCATION CRITERIA
The oral examination will be focused on questions concerning the course topics and the discussion of a specific design with refernece to the approach used and the results obtained.

Recommended reading
B. Razavi, “ Design of analog CMOS Integrated Circuits”, McGrawHill, 2001. R.J.Baker, “CMOS, Circuit Design, Layout, and Simulation”, Wiley, 2010. R.Schaumann, M.S.Ghausi, K.R.Laker,, “Design of Analog Filters”, Prentice Hall, 1990. P.E.Allen,D.R.Holberg, “CMOS analog Circuit DEsign“, Oxford University Press,2010. M.Liu, “Demystifying Switched Capacitor Circuits“, Elsevier,2006. R.Gregorian, G.C.Temes.“Analog MOS Integrated Circuits for Signal Processing“, John Wiley,1986.

Courses
  • Ingegneria Elettronica (Corso di Laurea Magistrale (DM 270/04))




Università Politecnica delle Marche
P.zza Roma 22, 60121 Ancona
Tel (+39) 071.220.1, Fax (+39) 071.220.2324
P.I. 00382520427